| 摘要 |
PURPOSE:To accomplish a high density on th titled semiconductor device by a method wherein the device is formed into the structure in which they are superposed with an insulating material inserted between the wide widthed surfaces of a plurality of strip-like leads. CONSTITUTION:The first lead 2 and the second lead 3 are constructed in such a manner that they are superposed with the insulating material 4 such as polyimide 4, for example, pinched between them. The first lead 2 is bent toward outside on the exterior of a package 7, and the second lead 3 is bent toward inside of the package 7. An LSI (large scale integrated circuit) chip 1 and the lead 2 are electrically connected with a bonding wire 5, and the LSI chip 1 and the lead 3 are electrically connected with a bonding wire 6. As a result, the area of the package can be reduced, and the mounting density of the device can also be improved sharply. |
