METHODS OF FORMING PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

摘要

First lines individually extended in a first direction on a substrate, first and second spacers on both side walls of each first line, and second lines between the first and the second spacers to be individually extended in the first direction are formed. An upper part of each first spacer is separated by first spacer patterns arranged in the first direction and an upper part of each second spacer is separated by second spacer patterns arranged in the first direction, by forming separation lines which are individually extended in a second direction perpendicular to the first direction and penetrate at least the upper part of the first and the second spacers. Some of the first and the second spacer patterns are replaced with third and fourth spacer patterns respectively, and the third and the fourth spacer patterns arranged on both side walls of each first line are arranged in a zigzag shape in the first direction. First trenches are formed by removing the upper part of the first and the second spacer patterns which are not replaced, and the upper part of the second lines adjacent thereto. Patterns respectively filling the first trenches are formed.