MAGNETIC MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a magnetic memory device and a method for forming the same. The magnetic memory device comprises: a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns; and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.