发明名称 インサイチュ嵌込み構造物形成方法
摘要 The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film with a surface, an etch rate interface and an etch-differential interface. The etch-differential interface is defined between the etch rate interface and the surface. A recorded pattern is transferred onto the substrate defined, in part, by the etch-differential interface. The recorded pattern has etched pattern characteristics (EPC) that define the shape of the pattern formed for a given etch process or set of etch processes. The etch-differential interface modifies the EPC. By establishing a suitable etch-differential interface, one may obtain a recorded pattern that differs substantially in shape compared with the shape of the patterned layer or the same pattern may be obtained.
申请公布号 JP5848386(B2) 申请公布日期 2016.01.27
申请号 JP20140042722 申请日期 2014.03.05
申请人 モレキュラー・インプリンツ・インコーポレーテッド 发明人 スリニーヴァッサン,シトルガタ・ヴイ;ミラー,マイケル・エヌ;ステイシー,ニコラス・エイ;ワン,デイビッド・シイ
分类号 H01L21/027;B81C1/00;H01L21/3065;H01L21/3205;H01L21/768 主分类号 H01L21/027
代理机构 代理人
主权项
地址