| 摘要 |
According to some embodiments of the present invention, silicon-filled openings are formed to have no occurrence or low occurrence of voids in a silicon-filled object, and maintain an exposed smooth silicon surface. According to some embodiments of the present invention, an opening of a substrate can be filled with silicon like amorphous silicon. Deposited silicon can have internal voids. The deposited silicon is exposed to a silicon mobility inhibitor like oxygen-containing species and/or a semiconductor dopant. Subsequently, the deposited silicon is annealed. After the annealing, the sizes of voids can be reduced. According to some embodiments of the present invention, the reduction of the sizes can cause removal of the voids. |
