窒化物半導体発光素子および窒化物半導体発光素子の製造方法,申请号JP20110281650-传众专利搜索

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发明名称	窒化物半導体発光素子および窒化物半導体発光素子の製造方法
摘要
申请公布号	JP5848600(B2)	申请公布日期	2016.01.27
申请号	JP20110281650	申请日期	2011.12.22
申请人	シャープ株式会社	发明人	蛭川秀一
分类号	H01L33/38;H01L33/32	主分类号	H01L33/38
代理机构		代理人
主权项
地址

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