SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device may include: a first gate structure and a second gate structure formed on a substrate; source/drain regions adjacent to the first gate structure; an interlayer dielectric layer which covers the source/drain regions and the first gate structure and the second gate structure; a source/drain contact hole etching the interlayer dielectric layer to expose the source/drain regions; a trench which exposes an upper surface of the second gate structure; a source/drain contact plug which touches the source/drain region and is formed in the source/drain contact hole; and a resistance pattern which touches the second gate structure and is formed in the trench.