COMPOSITION FOR ETCHING AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

The present invention relates to a composition for etching and a manufacturing method of a semiconductor device using the composition for etching, wherein the manufacturing method comprises an etching process. The composition for etching comprises: a first inorganic acid; a silane salt of inorganic acid produced by reacting a second inorganic acid and a silane compound; and a solvent. The composition for etching can selectively removes a nitride film while minimizing etch rate of an oxide film, does not have problems such as formation of particles which have a bad influence on device properties, and has the high selection ratio.