| 摘要 |
The present disclosure provides a semiconductor structure which includes a gate structure disposed over a substrate. The gate structure includes: a high-k dielectric layer, and a work function structure. The high-k dielectric layer includes: a base portion, and a side portion. The side portion is extended from an end unit of the base portion, and is substantially orthogonal to the base portion. The work function structure includes: a first metal disposed over the high-k dielectric layer; and a second metal disposed over the first metal, and including a sidewall portion extended from an end unit of a bottom portion. The first metal includes a material different from the second metal. The length of an interface between the sidewall portion and the bottom portion to the length of the bottom portion inside the high-k dielectric layer has a predetermined ratio. |
