发明名称 Improved plasmonic structures and devices
摘要 A plasmonic structure comprises: a metal layer 14 selected from: a Group 8 to Group 11 transition metal, aluminium, germanium, antimony or bismuth; and a barrier layer 16 formed from a 2-D material (e.g. (exfoliated) graphene, reduced graphene oxide, BN, MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, TaS2, NbSe2, NbS2, ReS2, ReSe2, TiS2, TiSe2, black phosphorous, graphene, or fluorinated graphene) disposed on a surface of the metal. The metal layer has a roughness permitting propagation of running plasmons along the metal-barrier layer interface. Alternatively, the metal film may be selected from iron, cobalt, nickel, ruthenium, rhodium, palladium, silver, osmium, iridium, platinum, gold, copper or silver, formed by electron-beam evaporation grown or sputtering; the barrier layer may be a chemical vapour deposition (CVD) growth layer. Root mean square (RMS) surface roughness of the metal may be less than 50 nm, preferably less than 20 nm. The structure may be used in a surface plasmon resonance (SPR) prism-mounted detector, e.g. analyte biosensor. Incident light reflectance between 100-1000 nm may be 10% or 20% or less. Quality (Q) factors of 13-20 can be achieved. Also claimed are plasmonic structure fabrication methods for a copper-graphene (carrier layer-based) and silver-graphene (solvent-based, not causing silver oxidation) structures.
申请公布号 GB2528430(A) 申请公布日期 2016.01.27
申请号 GB20140008727 申请日期 2014.05.16
申请人 THE UNIVERSITY OF MANCHESTER 发明人 ANDRE KONSTANTIN GEIM;VASYL GRIGORIEVICH KRAVETS;ALEXANDER NIKOLAEVICH GRIGORENKO
分类号 G02B5/00;G01N21/55 主分类号 G02B5/00
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