Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell

摘要

An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of the first electrode. The first electrode extends laterally in a first direction and the ion conductive material extends in a second direction different from and intersecting the first direction. The first electrode is received directly against the ion conductive material only where the first and second directions intersect. Other embodiments, including method embodiments, are disclosed.

主权项

1. An integrated circuit comprising a nonvolatile memory cell, the nonvolatile memory cell comprising:
a first electrode, a second electrode, and an ion conductive material between the first and second electrodes; the second electrode having an electrochemically active surface directly against the ion conductive material and an electrochemically inactive surface directly against the ion conductive material; the second electrode being elevationally outward of the first electrode; and the first electrode extending laterally in a first direction, the ion conductive material extending laterally in a second direction different from and intersecting the first direction, the first electrode being directly against the ion conductive material only where the first and second directions intersect, the second electrode having a lateral outermost sidewall and the ion conductive material having a transverse outermost sidewall directly against the second electrode lateral outermost sidewall, the second electrode only being directly against the ion conductive material at the transverse outermost sidewall of the ion conductive material.