LED element, and production method therefor

摘要

Provided is an LED element which achieves high light extraction efficiency even at low operating voltages and which can be produced using a simple process. The LED element has a first semiconductor layer made of a p-type nitride semiconductor, a light-emitting layer made of a nitride semiconductor formed on the upper layer of the first semiconductor layer, a second semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer, and a transparent electrode formed on the whole surface of the second semiconductor layer. The second semiconductor layer in at least a region that is in contact with the transparent electrode is made of AlnGa1-nN (0

主权项

1. An LED element comprising:
a support substrate made of a conductor or a semiconductor; a conductive layer formed on an upper layer of the support substrate; an insulating layer formed so that a bottom surface thereof is in contact with a portion of an upper surface of the conductive layer; a first semiconductor layer made of a p-type nitride semiconductor formed so that a bottom surface thereof is in contact with a portion of the upper surface of the conductive layer and a portion of an upper surface of the insulating layer; a light-emitting layer made of a nitride semiconductor formed on an upper layer of the first semiconductor layer; a second semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer; a transparent electrode formed on an entire upper surface of the second semiconductor layer; and a power supply terminal formed so that a bottom surface thereof is in contact with a portion of an upper surface of the transparent electrode, wherein the second semiconductor layer in at least a region that is in contact with the transparent electrode is made of AlnGa1-nN (0