发明名称 Manufacturing method of photovoltaic device and manufacturing apparatus for photovoltaic device
摘要 A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.
申请公布号 US9246043(B2) 申请公布日期 2016.01.26
申请号 US201214364855 申请日期 2012.02.01
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 Hamamoto Satoshi
分类号 H01L21/306;H01L31/18;H01L21/223;H01L31/068;H01L21/225;H01L21/67 主分类号 H01L21/306
代理机构 Buchanan Ingersoll & Rooney PC 代理人 Buchanan Ingersoll & Rooney PC
主权项 1. A manufacturing method of a photovoltaic device, comprising: a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; an etching step of removing the impurity diffusion layer of an outer edge portion of a first-surface side of the silicon-based substrate, and a step of forming an anti-reflective film on a second-surface side of the silicon based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows only within the outer edge portion of the silicon-based substrate towards the outer edge of the silicon-based substrate from a supply position, andan air supplying step of, on the second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid towards the outer edge of the silicon-based substrate at the etching-fluid supplying step.
地址 Chiyoda-Ku, Tokyo JP