发明名称 |
Liquid crystal display device and electronic device |
摘要 |
To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed. |
申请公布号 |
US9244323(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201414302840 |
申请日期 |
2014.06.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD |
发明人 |
Yamazaki Shunpei |
分类号 |
G02F1/136;G09G3/36;H01L29/04;G02F1/1368;G02F1/1333;H01L29/786;H01L27/12 |
主分类号 |
G02F1/136 |
代理机构 |
Robinson Intellectual Property Law Office |
代理人 |
Robinson Intellectual Property Law Office ;Robinson Eric J. |
主权项 |
1. A transistor comprising an oxide semiconductor layer, wherein characteristics of the transistor comprises:
an off-current being less than or equal to 10 aA/μm at room temperature; and an off-current being less than or equal to 100 aA/μm at a temperature of 85° C. |
地址 |
Kanagawa-ken JP |