发明名称 Liquid crystal display device and electronic device
摘要 To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.
申请公布号 US9244323(B2) 申请公布日期 2016.01.26
申请号 US201414302840 申请日期 2014.06.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD 发明人 Yamazaki Shunpei
分类号 G02F1/136;G09G3/36;H01L29/04;G02F1/1368;G02F1/1333;H01L29/786;H01L27/12 主分类号 G02F1/136
代理机构 Robinson Intellectual Property Law Office 代理人 Robinson Intellectual Property Law Office ;Robinson Eric J.
主权项 1. A transistor comprising an oxide semiconductor layer, wherein characteristics of the transistor comprises: an off-current being less than or equal to 10 aA/μm at room temperature; and an off-current being less than or equal to 100 aA/μm at a temperature of 85° C.
地址 Kanagawa-ken JP