发明名称 |
Strained structures of semiconductor devices |
摘要 |
A strained structure of a semiconductor device is disclosed. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a gate stack on the major surface of the substrate; a shallow trench isolation (STI) disposed on one side of the gate stack, wherein the STI is within the substrate; and a cavity filled with a strained structure distributed between the gate stack and the STI, wherein the cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate, wherein the strained structure comprises a SiGe layer and a first strained film adjoining the sidewall of the STI. |
申请公布号 |
US9246004(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201113296723 |
申请日期 |
2011.11.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wu Cheng-Hsien;Ko Chih-Hsin;Wann Clement Hsingjen |
分类号 |
H01L29/78;H01L21/3065;H01L29/08;H01L29/267;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A semiconductor device comprising:
a substrate comprising a major surface; a gate stack on the major surface of the substrate; a shallow trench isolation (STI) disposed on one side of the gate stack, wherein the STI is within the substrate; and a cavity filled with a strained structure distributed between the gate stack and the STI, wherein the cavity comprises one sidewall formed by the STI, one sidewall formed by the substrate, and a bottom surface formed by the substrate, wherein the strained structure comprises a SiGe layer and a first strained film, the first strained film separates the SiGe layer from the STI, the SiGe layer extends over a top surface of the first strained film, and the first strained film comprises II-VI semiconductor material or III-V semiconductor material. |
地址 |
Hsin-Chu TW |