Nonvolatile semiconductor memory device

摘要

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a semiconductor layer; a control gate electrode; and an organic molecular layer formed between the semiconductor layer and the control gate electrode, the organic molecular layer having a first organic molecular film on the semiconductor layer side containing first organic molecules, the organic molecular layer having second organic molecular film on the control gate electrode side containing second organic molecules, the first organic molecule having a charge storing unit, the second organic molecule being an amphiphilic organic molecule.