Semiconductor constructions, memory cells and memory arrays

摘要

Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.

主权项

1. A semiconductor construction, comprising:
oxygen-sensitive material structures supported by a semiconductor substrate; each oxygen-sensitive material structure comprising an angled plate, with the angled plate having a horizontal portion and a non-horizontal portion extending upwardly from the horizontal portion; each angled plate having an interior sidewall, an exterior sidewall in opposing relation to the interior sidewall and lateral edges extending form the interior sidewall to the exterior sidewall; bitlines over the oxygen-sensitive material structures; and a non-oxygen-containing structure along the interior sidewalls, along the exterior sidewalls and along the lateral edges; and wherein oxygen-containing material is directly against the non-oxygen-containing structure and spaced from the oxygen-sensitive material by intervening regions of the non-oxygen-containing structure.