Semiconductor device

摘要

A semiconductor device used for a semiconductor relay includes: a first diode; a second diode; an electric field shield film for covering the second semiconductor island region, where the second diode is formed; and a wiring for electrically connecting the first diode to the second diode. The wiring is arranged so as to cross above a silicon oxide film surrounding the second semiconductor island region. The electric field shield film is positioned below the wiring, and has a cutout portion in an overlapping region which overlaps the wiring. By forming the cutout portion, end portions of the electric field shield film is arranged to be shifted. Therefore, formation of a deep concave portion which is based on a concave portion on the silicon oxide film and a step of the electric field shield film over the entire width of the wiring can be prevented, and the disconnection of the wiring can be prevented.

主权项

1. A semiconductor device comprising:
a first semiconductor island region formed above a support body and surrounded by a first insulating region; a second semiconductor island region formed above the support body and surrounded by a second insulating region; a first diode formed in the first semiconductor island region; a second diode formed in the second semiconductor island region; an electric field shield film for covering the second semiconductor island region; and a wiring for electrically connecting the first diode to the second diode, wherein the wiring crosses above the second insulating region, and the electric field shield film is positioned below the wiring, and has a first cutout portion in an overlapping region which overlaps the wiring, wherein the electric field shield film only covers the second semiconductor island region, among the first semiconductor island region and the second semiconductor island region.