发明名称 Deposition mask, deposition apparatus, and deposition method
摘要 A deposition mask is used to pattern a thin film 3 on a substrate 10 by depositing deposition particles through a plurality of openings K having a stripe pattern. The deposition mask includes a frame 65; a plurality of mask layers 70 provided in the frame so as to overlap each other; and a support layer 71 provided between the mask layers 70. Each of the mask layers 70 is formed by arranging a plurality of mask wires 72 in a stripe pattern in a tensioned state, and the support layer 71 is formed by arranging a plurality of support wires 74 in a tensioned state so as to cross the mask wires 72. A plurality of gaps 73 in each of the plurality of mask layers 70 overlap each other to form a plurality of through gaps 73a that linearly extend through all of the plurality of mask layers 70. The openings K are formed by the through gaps 73a.
申请公布号 US9246101(B2) 申请公布日期 2016.01.26
申请号 US201013583611 申请日期 2010.10.29
申请人 Sharp Kabushiki Kaisha 发明人 Sonoda Tohru;Hayashi Nobuhiro;Kawato Shinichi
分类号 H01L21/00;B05C13/02;B05C21/00;B05C11/11;H01L51/00;C23C14/04;C23C14/24;H01L27/32;H01L51/56 主分类号 H01L21/00
代理机构 Morrison & Foerster LLP 代理人 Morrison & Foerster LLP
主权项 1. A deposition mask that is used to form a thin film in a prescribed pattern on a substrate by depositing deposition particles through a plurality of openings having a stripe pattern, comprising: a frame-shaped mask support body; a plurality of mask layers including at least a first mask layer and a second mask layer, and provided in a frame of the mask support body so as to overlap each other; and a support layer provided between the first mask layer and the second mask layer, wherein each of the first mask layer and the second mask layer is formed by arranging in a stripe pattern a plurality of mask wires in a same direction in a tensioned manner on the mask support body, the support layer is formed by arranging a plurality of support wires in a tensioned manner on the mask support body so as to cross the mask wires, a plurality of gaps in each of the first mask layer and the second mask layer overlap each other to form a plurality of through gaps that linearly extend through both the first mask layer and the second mask layer, the plurality of openings are formed by the plurality of through gaps, and the mask wires of the first mask layer overlap the mask wires of the second mask layers in a vertical direction, so that outlines of the mask wires of the first mask layer match outlines of the mask wires of the second mask layer as the mask wires of the first mask layer and the mask wires of the second mask layers are viewed in a direction perpendicular to the first mask layer and the second mask layer.
地址 Osaka JP