Structure and method for semiconductor device

摘要

A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region formed in the substrate. The semiconductor device further includes an impurity diffusion stop layer formed in a recess of the substrate between the source region and the drain region, wherein the impurity diffusion stop layer covers bottom and sidewalls of the recess. The semiconductor device further includes a channel layer formed over the impurity diffusion stop layer and in the recess, and a gate stack formed over the channel layer. The impurity diffusion stop layer substantially prevents impurities of the substrate and the source and drain regions from diffusing into the channel layer.

主权项

1. A method of forming a semiconductor device, comprising:
etching a substrate thereby forming a recess in the substrate; forming an impurity diffusion stop layer in the recess, the impurity diffusion stop layer covering a bottom and sidewalls of the recess; forming a channel layer over the impurity diffusion stop layer; and forming a gate stack over the channel layer.