发明名称 |
Power semiconductor device and method of manufacturing the same |
摘要 |
A power semiconductor device may include: a base substrate including a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate and having an impurity concentration higher than that of the drift layer; a second conductive type well layer disposed inside of one surface of the base substrate; a trench formed from one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in a depth direction; a first insulation film disposed on a surface of the base substrate; and a first electrode disposed in the trench. A peak point of an impurity doping concentration of the diffusion layer in a transverse direction may be positioned in a region contacting a side surface of the trench. |
申请公布号 |
US9245986(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201414322346 |
申请日期 |
2014.07.02 |
申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
Song In Hyuk;Park Jae Hoon;Seo Dong Soo;Jang Chang Su |
分类号 |
H01L29/78;H01L29/00;H01L21/336;H01L29/739;H01L29/66;H01L21/265;H01L29/36 |
主分类号 |
H01L29/78 |
代理机构 |
Ladas & Parry, LLP |
代理人 |
Ladas & Parry, LLP |
主权项 |
1. A power semiconductor device comprising:
a base substrate having one surface and an other surface opposing the one surface and comprising a first conductive type drift layer; a second conductive type semiconductor substrate disposed on the other surface of the base substrate; a second conductive type well layer disposed under the one surface of the base substrate; a first conductive type diffusion layer disposed in the base substrate, formed to be spaced apart from the well layer in a first direction, and having an impurity concentration higher than that of the drift layer; a trench formed from the one surface of the base substrate including the well layer so as to penetrate through the diffusion layer in the first direction; an insulation film disposed on the one surface of the base substrate including an inner wall of the trench; and a first electrode disposed in the trench, wherein a peak point of an impurity doping concentration of the diffusion layer in a second direction perpendicular to the first direction is positioned in a region contacting a side surface of the trench. |
地址 |
Gyeonggi-Do KR |