发明名称 |
Metal pads with openings in integrated circuits |
摘要 |
A device includes a metal pad, and a passivation layer including portions overlapping edge portions of the metal pad. A Post-Passivation-Interconnect (PPI) includes a trace portion overlying the passivation layer, and a pad portion connected to the trace portion. A polymer layer includes an upper portion over the PPI, and a plug portion extending into, and encircled by, the pad portion of the PPI. |
申请公布号 |
US9245833(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201313764569 |
申请日期 |
2013.02.11 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Shuo-Mao;Huang Yu-Ting |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/498;H01L23/31;H01L23/00;H01L23/525 |
主分类号 |
H01L23/48 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A device comprising:
a metal pad; a passivation layer comprising portions overlapping edge portions of the metal pad, wherein the metal pad and the passivation layer are comprised in a chip; a Post-Passivation-Interconnect (PPI) comprising:
a trace portion overlying the passivation layer; anda pad portion connected to the trace portion; and a first polymer layer comprising:
an upper portion over the PPI; anda plug portion extending into, and encircled by, the pad portion of the PPI, wherein the plug portion penetrates through the pad portion, with a bottom surface of the plug portion connected to a bottom surface of the pad portion to form a substantially continuous bottom surface; a molding material encircling the chip; and a second polymer layer over the metal pad, wherein a top surface of the molding material and a top surface of the second polymer layer are substantially in a same horizontal plane parallel to a top surface of the metal pad. |
地址 |
Hsin-Chu TW |