发明名称 |
Electrical and opto-electrical characterization of large-area semiconductor devices |
摘要 |
The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements. It also relates to a corresponding electrical and/or opto-electrical characterisation device comprising a first electrode, a movable electrode assembly with a container holding an electrolyte solution and a second electrode immersed into it and scanning means. |
申请公布号 |
US9245810(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201013266948 |
申请日期 |
2010.04.27 |
申请人 |
UNIVERSITE DU LUXEMBOURG;TDK CORPORATION |
发明人 |
Dale Phillip;Siebentritt Susanne |
分类号 |
G01R31/02;H01L21/66 |
主分类号 |
G01R31/02 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. An electrical and/or opto-electrical characterization method for testing and manufacturing large-area semiconductor devices in production, the method comprising the steps of:
providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode, immersing the second electrode into the electrolyte solution, positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device, the top surface of the semiconductor device comprised of a conductive semiconductor material; and, scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements. |
地址 |
Luxembourg DE |