发明名称 Electrical and opto-electrical characterization of large-area semiconductor devices
摘要 The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements. It also relates to a corresponding electrical and/or opto-electrical characterisation device comprising a first electrode, a movable electrode assembly with a container holding an electrolyte solution and a second electrode immersed into it and scanning means.
申请公布号 US9245810(B2) 申请公布日期 2016.01.26
申请号 US201013266948 申请日期 2010.04.27
申请人 UNIVERSITE DU LUXEMBOURG;TDK CORPORATION 发明人 Dale Phillip;Siebentritt Susanne
分类号 G01R31/02;H01L21/66 主分类号 G01R31/02
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. An electrical and/or opto-electrical characterization method for testing and manufacturing large-area semiconductor devices in production, the method comprising the steps of: providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode, immersing the second electrode into the electrolyte solution, positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device, the top surface of the semiconductor device comprised of a conductive semiconductor material; and, scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements.
地址 Luxembourg DE