Method of manufacturing a semiconductor device

摘要

To provide a technique adopting a TSV technique, capable of improving manufacturing yield and reliability of semiconductor devices. By partitioning a connection pad-forming region into a plurality of regions and by forming, respectively, connection pads 17 having a relatively small planar area, spaced apart from an adjacent connection pad 17 in each of partitioned regions, dishing generated in the connection pad 17 is lightened. In addition, by not forming a through hole 23 for forming a through electrode 27 in an interlayer insulating film 9 covering a semiconductor element, intrusion of H2O, a metal ion such as Na+ or K+, etc. into an element-forming region from the through hole, via the interlayer insulating film is prevented.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) forming a first insulating film over a first main surface of a semiconductor substrate; (b) etching the first insulating film to form, respectively, a plurality of connection holes reaching the first main surface of the semiconductor substrate in each of partitioned regions formed by partitioning a connection pad-forming region; (c) embedding a first metal film inside the connection holes to form, respectively, a plurality of connection electrodes including the first metal film in each of the partitioned regions; (d) forming a second insulating film over the first insulating film and the connection electrodes; (e) etching the second insulating film to form, respectively, trenches passing through the second insulating film from the upper surface to the lower surface in each of the partitioned regions; (f) embedding a second metal film inside the trench in each of the partitioned regions to form, respectively connection pads including the second metal film in each of the partitioned regions; (g) after subjecting the semiconductor substrate to a processing thinly from a second main surface opposite to the first main surface, forming a through hole reaching the first main surface in the semiconductor substrate; (h) forming a third insulating film on a side surface of the through hole; and (i) forming, inside the through hole, a through electrode electrically coupled to the connection pad in each of partitioned regions.