Nanopore device wetting

摘要

A method for wetting a nanopore device includes filling a first cavity of the nanopore device with a first buffer solution having a first potential hydrogen (pH) value, filling a second cavity of the nanopore device with a second buffer solution having a second pH value, wherein the nanopore device includes a transistor portion having a first surface, an opposing second surface, and an orifice communicative with the first surface and the second surface, the first surface partially defining the first cavity, the second surface partially defining the second cavity, applying a voltage in the nanopore device, and measuring a current in the nanopore device, the current having a current path partially defined by the first cavity, the second cavity, and the orifice.

主权项

1. A method for wetting a nanopore device, the method comprising:
filling a first cavity of the nanopore device with a first buffer solution having a first potential hydrogen (pH) value; filling a second cavity of the nanopore device with the first buffer solution having the first pH value, wherein the nanopore device includes a transistor portion having a first surface, an opposing second surface, and an orifice communicative with the first surface and the second surface, the first surface partially defining the first cavity, the second surface partially defining the second cavity; measuring a first current in the nanopore device in response to applying a first voltage in the nanopore device, the first current having a current path partially defined by the first cavity, the second cavity, and the orifice; flushing the first buffer solution having the first pH value from the second cavity and filling the second cavity with a second buffer solution having a second pH value of 1.9 to 2.1, wherein the second pH value is different from the first pH value; and measuring a second current in the nanopore device in response to applying a second voltage in the nanopore device.