BANDGAP-ENGINEERED MEMORY WITH MULTIPLE CHARGE TRAPPING LAYERS STORING CHARGE

摘要

A memory cell includes: a gate; a channel material including a channel surface and a channel valence band edge; and a precursor stack between the gate and the channel surface. The precursor stack includes: a multilayered tunneling structure on the channel surface; a first charge storage nitride film on the multilayered tunneling structure; a first blocking oxide film on the first charge storage nitride film; a second charge storage nitride film on the first blocking oxide film; and a second blocking oxide film on the second charge storage nitride film. The multilayered tunneling structure includes: a first tunneling oxide film; a first tunneling nitride film on the first tunneling oxide film; and a second tunneling oxide film on the first tunneling nitride film.