| 摘要 |
973,104. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Feb. 11, 1963 [Dec. 27, 1961], No. 46290/61. Heading H1K. In a semi-conductor device formed of a body of refractory semi-conductor material the peripheral edge of the body is hermetically sealedwith a vitreous ma terial adjacent one face of the body which is then doped to form a PN junction, the boundary of which is sealed by the vitreous material. In the embodiment (Fig. 2) a silicon or germanium cylinder is placed in an opening in an annulus of vitreous material 3 which is fused to the cylinder periphery followed by vapour diffusion of aluminium into one face of the cylinder to form a PN junction 6, the edges of which are sealed by the layer 3. A further PN junction may be formed in another face 4<SP>1</SP> of the body or an ohmic contact may be provided at this face. Prior to the fusion of the glass on to the semiconductor body an oxide film may be formed on the body which could serve as a barrier layer in the event of the glass and S.C. material being chemically incompatible. The impurity activator in vapour state may be mixed with a carrier gas. The composition of a suitable glass is given. The process for forming many units each including a PN junction is referred to. Specification 765,190 is referred to. |
