Stacked bi-layer as the low power switchable RRAM

摘要

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The resistive switching nonvolatile memory cells may include a first layer disposed. The first layer may be operable as a bottom electrode. The resistive switching nonvolatile memory cells may also include a second layer disposed over the first layer. The second layer may be operable as a resistive switching layer that is configured to switch between a first resistive state and a second resistive state. The resistive switching nonvolatile memory cells may include a third layer disposed over the second layer. The third layer may be operable as a resistive layer that is configured to determine, at least in part, an electrical resistivity of the resistive switching nonvolatile memory element. The third layer may include a semi-metallic material. The resistive switching nonvolatile memory cells may include a fourth layer that may be operable as a top electrode.

主权项

1. A resistive switching nonvolatile memory element comprising:
a first layer formed on a substrate,
wherein the first layer is a current steering element comprising one or more nitrides; a second layer formed over the first layer,
wherein the second layer is a resistive switching layer; a third layer formed over the second layer,
wherein the third layer is a resistive layer having a substantially constant resistance, andwherein the third layer comprises a semi-metallic material,
wherein the semi-metallic material is, at least in part, amorphous,wherein the semi-metallic material is more than 0% and less than 5% crystalline by volume; and a fourth layer formed over the third layer, wherein the fourth layer is a top electrode; wherein the second layer directly interfaces the first layer and the third layer; and wherein the third layer directly interfaces the second layer and the fourth layer.