Crystal growth method and semiconductor light emitting device

摘要

According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x<0.5) and has a thickness of not smaller than 20 nanometers and not larger than 50 nanometers. In addition, the method can include growing the crystal including a nitride semiconductor on the buffer layer at a temperature higher than a temperature of the substrate in the depositing the buffer layer.

主权项

1. A semiconductor light emitting device comprising:
a substrate having a major surface provided with asperities; a GaxAl1-xN (0.1≦x<0.5) region provided directly on the major surface of the substrate; a crystal region of a nitride semiconductor provided on the GaxAl1-xN (0.1≦x<0.5) region, a pit density of the crystal region being less than 200 pits per 400 μm×400 μm area; and a light emitting portion provided on the crystal region, wherein an average thickness of the GaxAl1-xN (0.1≦x<0.5) region is not smaller than 20 nanometers and not larger than 50 nanometers.