Wiring, thin film transistor, thin film transistor panel and methods for manufacturing the same

摘要

A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.

主权项

1. A thin film transistor comprising:
a gate electrode; a gate insulating layer on the gate electrode; a semiconductor on the gate insulating layer; a drain electrode and a source electrode on the semiconductor and spaced apart from each other; and each of the drain electrode and the source electrode comprises:
a first metal diffusion preventing layer on the gate insulating layer, wherein the first metal diffusion preventing layer prevents diffusion of metal atoms, anda second metal diffusion preventing layer on the first metal diffusion preventing layer; wherein at least one of the first and second metal diffusion preventing layers includes grains in a columnar structure which are in a direction substantially perpendicular to the semiconductor, any of the first and second metal diffusion preventing layers contains polycrystalline titanium, the polycrystalline titanium having a plasma-treated surface layer of a titanium oxide (TiOx) amorphous structure, and first grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor, the first and second metal diffusion preventing layers having the plasma-treated surface layer of the titanium oxide (TiOx) amorphous structure therebetween.