发明名称 Lower page only host burst writes
摘要 In a Multi Level Cell (MLC) memory array, a burst of data from a host may be written in only lower pages of a block in a rapid manner. Other data from a host may be written in lower and upper pages so that data is more efficiently arranged for long term storage.
申请公布号 US9244631(B2) 申请公布日期 2016.01.26
申请号 US201314099027 申请日期 2013.12.06
申请人 SanDisk Technologies Inc. 发明人 Gorobets Sergey;Avila Chris;Sprouse Steven T.
分类号 G06F12/00;G06F3/06;G06F12/06;G06F12/02 主分类号 G06F12/00
代理机构 Davis Wright Tremaine LLP 代理人 Davis Wright Tremaine LLP
主权项 1. A method of operating a block-erasable nonvolatile memory array comprising: receiving data to be programmed in the block-erasable nonvolatile memory array from a host; determining, prior to programming the data in the block-erasable nonvolatile memory array, whether the data is burst data; if the data is burst data, programming the burst data as only lower page data along three or more word lines of at least one block configured as a Multi Level Cell (MLC) block; subsequently, only after the burst data from the host is programmed, copying additional data from outside the MLC block to fill upper pages of the MLC block while maintaining the burst data as lower page data in the MLC block; and if the data is not burst data, programming the data in Multi Level Cell (MLC) blocks as both lower page data and upper page data along word lines of the MLC blocks in accordance with a programming sequence in which lower page data is programmed one word line ahead of upper page data.
地址 Plano TX US