Method for postdoping a semiconductor wafer

摘要

A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation.

主权项

1. A method for treating a semiconductor wafer having a basic doping, wherein the method comprises:
determining a doping concentration of the basic doping; and adapting the basic doping of the semiconductor wafer by postdoping comprising
a proton implantation and a subsequent thermal process for producing hydrogen induced donors, wherein at least one of the following parameters is dependent on the determined doping concentration of the basic doping:
an implantation dose of the proton implantation, anda temperature of the thermal process, wherein the semiconductor wafer has a first side, wherein the proton implantation is carried out via the first side, and wherein the proton implantation comprises at least two proton implantation acts in which protons are implanted with different implantation energies.