Semiconductor device with transistor and method of fabricating the same

摘要

A method of fabricating a semiconductor device that includes forming a gate stack layer including a metal-containing layer on a semiconductor substrate having an NMOS region and a PMOS region, introducing arsenic to the gate stack layer in the NMOS region, introducing aluminum to the gate stack layer in the PMOS region, and etching the gate stack layers, where the arsenic and the aluminum are introduced, to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a gate stack layer including a high-k layer, a metal-containing layer on a semiconductor substrate having an NMOS region and a PMOS region; introducing arsenic to the gate stack layer in the NMOS region; introducing aluminum to the gate stack layer in the PMOS region; and etching the gate stack layer, where the arsenic and the aluminum are introduced, to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively, wherein the gate stack layer in the NMOS region includes a capping layer, wherein the capping layer has a lanthanum oxide and is located below the metal-containing layer and over the high-k layer, and wherein the gate stack layer in the PMOS region does not include the capping layer.