Semiconductor device and method of manufacturing thereof

摘要

A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.

主权项

1. A semiconductor device, comprising:
a substrate having a top surface; a semiconductor circuit defining a circuit area on the top surface of the substrate; and an interconnect spaced apart from the circuit area and extending from the top surface into the substrate, the interconnect comprising:
a first sidewall formed of a first electrically insulating material;a second sidewall formed of a second electrically insulating material, the second sidewall being arranged outside the first sidewall;a third sidewall formed of an electrically conducting material, the third sidewall being arranged inside the first sidewall,wherein an opening is formed within the first sidewall and extends laterally between an outer surface of the third sidewall and an inner surface of the second sidewall.