Method for fabricating silicon-doped or boron-doped aluminum electrode

摘要

A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.

主权项

1. A method for fabricating a silicon-doped or boron-doped aluminum electrode of solar cells comprising the steps of:
doping a plurality of doping atoms in an aluminum material and the doping atoms are selected from a group consisting of boron and silicon; disposing the aluminum material on a silicon wafer having at least one passivation layer on a surface thereof so as to form an aluminum layer over the passivation layer and the aluminum layer having the doping atoms; and melting the aluminum layer and the passivation layer in dot or linear pattern to form a plurality of aluminum alloy bars, wherein the aluminum alloy bars are melted, moving downward and passing through the passivation layer to form ohmic contact with the silicon wafer.