| 发明名称 | Drift acceleration in resistance variable memory | ||
| 摘要 | The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell. | ||
| 申请公布号 | US9245620(B2) | 申请公布日期 | 2016.01.26 |
| 申请号 | US201514750525 | 申请日期 | 2015.06.25 |
| 申请人 | Micron Technology, Inc. | 发明人 | Calderoni Alessandro;Ferro Massimo;Fantini Paolo |
| 分类号 | G11C11/00;G11C11/14;G11C13/00;G11C11/56;G11C29/00 | 主分类号 | G11C11/00 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A method of operating a resistance variable memory cell, comprising: applying a programming signal to the resistance variable memory cell to program the cell to a target state; and accelerating a drift of a resistance of the programmed resistance variable memory cell; and wherein the method is performed during a wafer testing process. | ||
| 地址 | Boise ID US | ||