发明名称 Method of fabricating a composite structure with a stable bonding layer of oxide
摘要 A method of preventing microcavity formation in a bonding layer of a composite structure resulting from creep and thermal expansion due to high temperature exposure of the composite structure. The method includes the steps of providing a thin film with a thickness of 5 micrometers or less; providing a bonding layer of oxide with a thickness that is equal to or greater than the thickness of the thin film with the bonding layer formed by low pressure chemical vapor deposition. The thin film or support substrate have a mean thermal expansion coefficient of 7×10−6 K−1 or more. The thin film, bonding layer and support substrate combine to reduce stress in and plastic deformation of the bonding layer during exposure to high temperatures of more than approximately 900° C. to thus prevent microcavities from appearing in the bonding layer.
申请公布号 US9242444(B2) 申请公布日期 2016.01.26
申请号 US201314031498 申请日期 2013.09.19
申请人 SOITEC 发明人 Faure Bruce;Marcovecchio Alexandra
分类号 H01L21/762;H01L33/00;B32B37/14 主分类号 H01L21/762
代理机构 TraskBritt 代理人 TraskBritt
主权项 1. In a composite structure comprising an oxide bonding layer and a thin film bonded to a support substrate, a method of preventing microcavity formation in the bonding layer due to irreversible transition of the oxide from an elastic mode of deformation to a plastic mode of deformation resulting from creep and thermal expansion due to high temperature exposure of the composite structure, which method comprises: providing the thin film with a thickness of 5 micrometers or less; providing the bonding layer of oxide with a thickness that is equal to or greater than the thickness of the thin film, with the bonding layer formed between the support substrate and the thin film by low pressure chemical vapor deposition (LPCVD) on either a bonding face of the support substrate or a bonding face of the thin film, or both, to produce the deposited oxide of the bonding layer with a temperature stability that is close to that of an oxide obtained by thermal oxidation; selecting the thin film or support substrate, whichever is to receive the bonding layer, to be of a material having a mean thermal expansion coefficient of 7×10−6 K−1 or more; and bonding the thin film to the support substrate with the bonding layer therebetween, wherein the combination of the thin film, bonding layer and support substrate reduce stress in and plastic deformation of the bonding layer during exposure to high temperatures of more than approximately 900° C. to thus prevent microcavities from appearing in the bonding layer.
地址 Brenin FR