Photovoltaic cell

摘要

In a photovoltaic cell, an i-type amorphous silicon film and an n-type amorphous silicon film are formed in a region excluding a predetermined width of an outer periphery on a main surface of an n-type single crystalline silicon substrate. A front electrode is formed so as to cover the i-type amorphous silicon film and the n-type amorphous silicon film on a main surface of the n-type single crystalline silicon substrate. An i-type amorphous silicon film and a p-type amorphous silicon film are formed on the entire area of a back surface of the n-type single crystalline silicon substrate. A back electrode is formed in a region excluding a predetermined width of an outer periphery on the p-type amorphous silicon film. A surface, on the side of the front electrode, of the photovoltaic cell is a primary light incidence surface.

主权项

1. A photovoltaic cell comprising:
a crystal-based semiconductor of one conductivity type; a first substantially intrinsic amorphous-based semiconductor film formed on at least a first region of a first surface of said crystal-based semiconductor, the first region having a predetermined width and excluding an outer periphery of said first surface of said crystal based semiconductor; a second amorphous-based semiconductor film of a conductivity type identical or opposite to said crystal-based semiconductor formed on a surface of said first substantially intrinsic amorphous-based semiconductor film and extending along said first region; and a first translucent electrode layer formed on a surface of said second amorphous-based semiconductor film, said first surface of said crystal-based semiconductor or said surface of said first amorphous-based semiconductor film being exposed from said second amorphous-based semiconductor film on said outer periphery of said crystal based semiconductor, said first electrode layer being formed on a second region covering said surface and a side surface of said second amorphous-based semiconductor film and extending over said outer periphery, said first electrode layer being in direct contact with said first surface of said crystal based semiconductor film or said surface of said first amorphous-based semiconductor film exposed from said second amorphous-based semiconductor film, on said outer periphery, and said first amorphous-based semiconductor film, said second amorphous-based semiconductor film, and said first electrode layer not formed on a side surface of said crystal based-semiconductor.