Tunneling barrier creation in MSM stack as a selector device for non-volatile memory application

摘要

Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can include insulator layers between the semiconductor layer and the metal layers to lower the leakage current of the device. The metal layers of the selector element can include conductive materials such as tungsten, titanium nitride, or combinations thereof.

主权项

1. A nonvolatile memory cell comprising:
a first electrode layer; a selector element; wherein the selector element comprises a first conductive layer, a first insulator layer, a first interface layer, a semiconductor layer, a second interface layer, a second insulator layer, and a second conductive layer, wherein a thickness of the semiconductor layer is between about 10 nm and about 40 nm; and a second electrode layer.