Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

摘要

According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.

主权项

1. A method for manufacturing a semiconductor light emitting device, the device including:
a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface; a light transmitting section provided on a side of the first major surface; and a wavelength conversion section provided on a side of the first major surface and formed from a resin mixed with a phosphor, the method comprising:
integrally forming the semiconductor light emitting device in a plurality; andsingulating the plurality of integrally formed semiconductor light emitting devices, wherein integrally forming comprises:
forming the light emitting section on a substrate;peeling the light emitting section from the substrate;forming the light transmitting section on the peeled light emitting section; andforming the wavelength conversion section provided over the light transmitting section, and including a cutting line for singulating,in forming the light transmitting section, the shape of the light transmitting section is changed such that an optical path length in the wavelength conversion section is adjusted to suppress chromaticity shift in accordance with an emission characteristic of the light emitting section,in forming the wavelength conversion section, a thickness of the wavelength conversion section is changed such that the optical path length in the wavelength conversion section is adjusted to suppress chromaticity shift by the light transmitting section, andin forming the wavelength conversion section, setting a hardness of the resin to exceed 30 in Shore D hardness such that the phosphor included in the wavelength conversion section is inhibited from desorption from the resin.