Nitride-based semiconductor substrate and semiconductor device

摘要

A nitride-based semiconductor substrate has a diameter of 25 mm or more, a thickness of 250 micrometers or more, a n-type carrier concentration of 1.2×1018 cm−3 or more and 3×1019 cm−3 or less, and a thermal conductivity of 1.2 W/cmK or more and 3.5 W/cmK or less. Alternatively, the substrate has an electron mobility μ [cm2/Vs] of more than a value represented by logeμ=17.7−0.288 logen and less than a value represented by logeμ=18.5−0.288 logen, where the substrate has a n-type carrier concentration n [cm−3] that is 1.2×1018 cm−3 or more and 3×1019 cm−3 or less.

主权项

1. A nitride-based semiconductor substrate comprising a nitride-based semiconductor material, the nitride-based semiconductor substrate having:
a diameter of 25 mm or more; a thickness of 250 micrometers or more; an n-type carrier concentration in a range of 1.2×1018 cm−3 to 3×1019 cm−3; and a thermal conductivity in a range of 1.2 W/cmK to 3.5 W/cmK.