| 发明名称 |
Semiconductor structure having buried conductive elements |
| 摘要 |
Embodiments for the present invention provide a semiconductor device and methods for fabrication. In an embodiment of the present invention, a semiconductor structure comprises a first conductor horizontally formed on a semiconductor substrate. A second conductor is vertically formed in a semiconductor stack that includes the semiconductor substrate. An oxidized region is formed proximate to the first conductor. The second conductor is formed in a manner to be in electrical communication with the first conductor. The first conductor is formed in a manner to be laterally connected to the second conductor. The first conductor is formed in a manner to not traverse beneath the oxidized region. The first conductor is formed in a manner to have a reduced link-up resistance with adjacent epitaxial material included in the semiconductor structure. |
| 申请公布号 |
US9245892(B2) |
申请公布日期 |
2016.01.26 |
| 申请号 |
US201414184756 |
申请日期 |
2014.02.20 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Alptekin Emre;Batra Pooja R.;Cheng Kangguo;Divakaruni Ramachandra;Faltermeier Johnathan E.;Vega Reinaldo A. |
| 分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119;H01L21/768;H01L23/48 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
Meyers Steven J.;Bolar Trentice;Cohn Howard M. |
| 主权项 |
1. A semiconductor structure comprising:
a first conductor horizontally formed on a semiconductor substrate; a second conductor vertically formed in a semiconductor stack that includes the semiconductor substrate; an oxidized region formed proximate to the first conductor; wherein the second conductor is formed in a manner to be in electrical communication with the first conductor; wherein the first conductor is formed in a manner to be laterally connected to the second conductor; and wherein the first conductor is formed in a manner to not traverse beneath the oxidized region; and wherein the first conductor is formed in a manner to have a reduced link-up resistance with adjacent epitaxial material included in the semiconductor structure. |
| 地址 |
Armonk NY US |
