Simplified charge balance in a semiconductor device

摘要

A method of forming a charge balance region in an active semiconductor device includes: forming an epitaxial region including material of a first conductivity type on an upper surface of a substrate of the semiconductor device; forming multiple recessed features at least partially through the epitaxial region; depositing a film comprising material of a second conductivity type on a bottom and/or sidewalls of the recessed features using atomic layer deposition; and performing thermal processing such that at least a portion of the film deposited on the bottom and/or sidewalls of each of the recessed features forms a region of the second conductivity type in the epitaxial layer which follows a contour of the recessed features, the region of the second conductivity type, in conjunction with the epitaxial layer proximate the region of the second conductivity type, forming the charge balance region.

主权项

1. A method of forming a charge balance region in an active semiconductor device, the method comprising:
forming an epitaxial region comprising material of a first conductivity type on an upper surface of a substrate of the semiconductor device; forming a plurality of recessed features at least partially through the epitaxial region; depositing a film comprising material of a second conductivity type on at least one of a bottom and sidewalls of the recessed features using atomic layer deposition; and performing thermal processing such that at least a portion of the film deposited on each of the sidewalls of the recessed features forms a region of the second conductivity type in the epitaxial region which follows a contour of the recessed features, the region of the second conductivity type, in conjunction with the epitaxial region proximate the region of the second conductivity type, forming the charge balance region.