Packaging structure of light emitting diode and method of manufacturing the same

摘要

The present disclosure relates to a light emitting diode packaging structure and the method of manufacturing the same. The light emitting diode packaging structure has an insulating substrate with through holes formed on each side of the upper surface thereof, the through hole being filled with conductive metal. Additionally, a n-type layer, an active layer, a p-type layer, an insulating layer and a p-type electrode are formed on the insulating substrate. The structure further may include a n-type electrode provided on a side of the upper surface of the n-type layer; a first back electrode provided at one side of the back surface of the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate; and an optical element packaged on the base substrate.

主权项

1. A light emitting diode packaging structure, comprising:
an insulating substrate with through holes formed on each side of the upper surface of the insulating substrate, the through hole being filling with conductive metal; a n-type layer formed on the insulating substrate and configured to cover most of area of an upper surface of the insulating substrate such that a mesa is formed at one side of the insulating substrate while a hole is provided on the other side in the n-type layer with relative to the mesa, which is fit for the through hole in the insulating substrate and filled with conductive metal; an active layer provided on and at one side of the n-type layer, the area of the active layer being smaller than that of the n-type layer; a p-type layer provided on the active layer; an insulating layer configured on one side of the n-type layer, the active layer and the p-type layer and to cover part of the upper surface of the p-type layer; a p-type electrode configured to cover the insulating layer and part of the upper surface of the p-type layer, the p-type electrode being connected with the conductive metal in the through hole in the insulating substrate; a n-type electrode provided on a side of the upper surface of the n-type layer and configured to connect with the conductive metal in the through hole in the insulating substrate; a first back electrode provided at one side of back surface of the insulating substrate, the first back electrode connecting with the p-type electrode through the conductive metal in the through hole in the insulating substrate; a second back electrode provided at the other side of back surface of the insulating substrate, the second back electrode connecting with the n-type electrode through the conductive metal in the through hole in the insulating substrate, thereby forming a base substrate of a device; an optical element packaged on the base substrate.