Semiconductor devices and fabrication methods

摘要

Methods of fabricating vertical devices are described, along with apparatuses and systems that include them. In one such method, a vertical device is formed at least partially in a void in a first dielectric material and a second dielectric material. Additional embodiments are also described.

主权项

1. A method comprising:
forming a first dielectric material on a substrate; removing a portion of the first dielectric material to leave a remainder of the first dielectric material on the substrate; forming a second dielectric material on the substrate in contact with the remainder of the first dielectric material; removing a portion of the second dielectric material to leave a remainder of the second dielectric material in contact with the remainder of the first dielectric material; forming a vertical semiconductor structure in contact with the remainder of the first dielectric material and the remainder of the second dielectric material; forming a gate dielectric material on the remainder of the second dielectric material, a side of the vertical semiconductor structure, and a side of the remainder of the first dielectric material; forming a vertical gate material on a first portion of the gate dielectric material formed on the side of the vertical semiconductor structure and on the ate dielectric material formed on the remainder of the second dielectric material; and forming a third dielectric material on a second portion of the gate dielectric material on the side of the vertical semiconductor structure.