| 发明名称 | Non-volatile memory device | ||
| 摘要 | According to an embodiment, a nonvolatile memory device includes: a first interconnection layer extending in a first direction; a second interconnection layer extending in a second direction crossing the first direction, the second interconnection layer including a metal-containing layer and a metal ion source layer, and the metal ion source layer being provided on the first interconnection layer side; and a resistance change layer provided in a position where the first interconnection layer and the second interconnection layer cross each other and a metal ion released from the metal ion source layer being capable to be diffused into the resistance change layer. At least part of the second interconnection layer protrudes to the first interconnection layer side in a cross section of the second interconnection layer cut perpendicularly to the second direction. | ||
| 申请公布号 | US9245928(B2) | 申请公布日期 | 2016.01.26 |
| 申请号 | US201414461847 | 申请日期 | 2014.08.18 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Sugimae Kikuko;Nishihara Kiyohito |
| 分类号 | H01L21/4763;H01L27/24;H01L45/00 | 主分类号 | H01L21/4763 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A nonvolatile memory device comprising: a first interconnection layer extending in a first direction; a second interconnection layer extending in a second direction crossing the first direction, the second interconnection layer including a metal-containing layer and a metal ion source layer, and the metal ion source layer being provided on the first interconnection layer side; and a resistance change layer provided in a position where the first interconnection layer and the second interconnection layer cross each other and a metal ion released from the metal ion source layer being capable to be diffused into the resistance change layer, at least part of the second interconnection layer protruding to the first interconnection layer side in a cross section of the second interconnection layer cut perpendicularly to the second direction. | ||
| 地址 | Minato-ku JP | ||