| 发明名称 | Phase change memory element | ||
| 摘要 | A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers. | ||
| 申请公布号 | US9245924(B2) | 申请公布日期 | 2016.01.26 |
| 申请号 | US201414522057 | 申请日期 | 2014.10.23 |
| 申请人 | HIGGS OPL. CAPITAL LLC | 发明人 | Chen Frederick T.;Tsai Ming-Jinn |
| 分类号 | H01L47/00;H01L27/24;H01L45/00 | 主分类号 | H01L47/00 |
| 代理机构 | Schwabe Williamson & Wyatt | 代理人 | Schwabe Williamson & Wyatt |
| 主权项 | 1. A phase-change memory, comprising: a first electrode; a second electrode; an electrically-isolated conductor located between the first electrode and the second electrode; and a phase-change material that contacts each of the first electrode, the second electrode, and the electrically-isolated conductor; wherein the electrically-isolated conductor includes at least one of a thickness greater than a width of the phase-change material or a tapered end. | ||
| 地址 | Dover DE US | ||