Semiconductor device with internal substrate contact and method of production

摘要

The semiconductor device comprises a substrate (1) of semiconductor material, a contact hole (2) reaching from a surface (10) into the substrate, and a contact metallization (12) arranged in the contact hole, so that the contact metallization forms an internal substrate contact (4) on the semiconductor material at least in a bottom area (40) of the contact hole.

主权项

1. A semiconductor device comprising:
a substrate (1) of semiconductor material with a surface (10); a contact hole (2) reaching from the substrate surface (10) into the substrate (1); a contact metalization (12) in the contact hole (2);characterized in that
the contact metalization (12) makes a substrate contact (4) on the semiconductor material, and the substrate contact (4) occupies at least a bottom area (40) of the contact hole (2); a plurality of further contact holes (2) reaching from the substrate surface (10) into the substrate (1), with contact metalizations (12) in the contact holes (2) making substrate contacts (4) on the semiconductor material, the contact holes (2) being arranged in at least one row (20) of contact holes (2), wherein the contact hole (2) is in the shape of a contact trench (21) of longitudinal extension; and a through-substrate via (3, 13), the contact trench (21) being arranged along a line passing by the through-substrate via (3, 13).