Semiconductor devices having guard ring structure and methods of manufacture thereof

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a first functional region of an integrated circuit over a workpiece, and forming a second functional region of the integrated circuit over the workpiece. The method includes forming a guard ring around the first functional region of the integrated circuit. The guard ring is formed in a material layer disposed over the first functional region and the second functional region.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of integrated circuits (ICs) on a substrate, each of the plurality of ICs being individually surrounded by a respective seal ring; each of the plurality of ICs including a plurality of functional regions; forming in a material layer disposed over a first functional region of each IC a first guard ring around the first functional region of the IC, wherein the first guard ring is inside and separate from the seal ring; and forming in the material layer disposed over a second functional region of each IC a second guard ring around the second functional region of the IC, wherein the second guard ring is inside and separate from the seal ring and separate from the first guard ring, wherein at least one functional region of the IC does not have a guard ring around it, and wherein each guard ring is inside and separate from the respective seal ring surrounding the IC in which the guard ring is formed.