发明名称 Data storage device with in-memory parity circuitry
摘要 A data storage device includes a memory die. The memory die includes parity circuitry and a memory having a three-dimensional (3D) memory configuration. The memory includes a first block, a second block, and a third block. A method includes generating parity information based on first data associated with a first word line of the first block and further based on second data associated with a second word line of the second block. The parity information is generated by the parity circuitry. The method further includes writing the parity information to a third word line of the third block.
申请公布号 US9244767(B1) 申请公布日期 2016.01.26
申请号 US201414325023 申请日期 2014.07.07
申请人 SANDISK TECHNOLOGIES INC. 发明人 D'Abreu Manuel Antonio
分类号 G06F11/10;G11C29/52 主分类号 G06F11/10
代理机构 Toler Law Group, PC 代理人 Toler Law Group, PC
主权项 1. A data storage device comprising: a controller; and a memory die coupled to the controller, wherein the memory die includes parity circuitry, read/write circuitry, and a memory, wherein the memory includes a first block, a second block, and a third block, wherein the parity circuitry is configured to generate parity information based on first data associated with a first word line of the first block and further based on second data associated with a second word line of the second block, wherein the read/write circuitry is configured to write the parity information to a third word line of the third block, wherein the first block, the second block, and the third block are included in a first parity group of blocks of the memory, and wherein the parity circuitry is further configured to generate second parity information associated with a second parity group of blocks that includes the second block.
地址 Plano TX US